Enhanced energy storage properties of BaTiO3 thin films by Ba0.4Sr0.6TiO3 layers modulation

被引:50
作者
Diao, Chunli [1 ,2 ]
Liu, Hanxing [1 ]
Zheng, Haiwu [2 ]
Yao, Zhonghua [1 ]
Iqbal, Javed [1 ]
Cao, Minghe [1 ]
Hao, Hua [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
[2] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China
关键词
BST/BT/BST; thin films; energy storage; dielectric properties; DIELECTRIC-PROPERTIES; CERAMICS; DENSITY; CAPACITORS;
D O I
10.1016/j.jallcom.2018.06.199
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electrostatic dielectric energy storage capacitors have attracted much attention recently for their fast charging-discharging speed and high power density. Trilayered Ba(0.4)Sra(0.6)TiO(3)/BaTiO3/Ba0.4Sr0.6TiO3(BST/BT/BST) thin films were prepared by spin-coating technique. The sandwich-structured thin films showed high dielectric constant (epsilon(r) = 952) and low dielectric loss (tan delta = 0.034) at room temperature (10 kHz). Moreover, the dielectric constant of the thin films demonstrated good frequency stability within the measured frequency range and broad capacitance variation (20 degrees C-160 degrees C, Delta C/C-25(degrees)C<+/- 10%). The electric-field dependence of dielectric response was investigated and the dielectric tunability was 13.3% at 100 kV/cm. Compared with pure BT thin films, the heterostructure exhibited enhanced electric breakdown strength and energy storage density. The recoverable energy storage density and efficiency of BST/ BT/BST thin films were 14.69 J/cm(3) and 33.9% at 1.44 MV/cm, respectively. The results indicated that BST/ BT/BST heterostructure films would be an alternative way to improve the energy storage density of dielectrics for applications. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:362 / 368
页数:7
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