Solubility and diffusion of chromium in 4H-SiC

被引：4

作者：

Danno, Katsunori ^{[1
]}

Saito, Makoto ^{[1
]}

Seki, Akinori ^{[1
]}

Sato, Kazuaki ^{[1
]}

Bessho, Takeshi ^{[1
]}

Kimoto, Tsunenobu ^{[2
]}

机构：

[1] Toyota Motor Co Ltd, Higashifuji Tech Ctr, Susono, Shizuoka 4101193, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 06期

关键词：

ELECTRONIC-STRUCTURE CALCULATIONS; LIQUID-PHASE EPITAXY; LEVEL TRANSIENT SPECTROSCOPY; HIGH-SPEED GROWTH; CR BASED MELT; SILICON-CARBIDE; POPULATION ANALYSIS; SELF-DIFFUSION; DEFECT CENTERS; BAND-GAP;

D O I：

10.7567/APEX.9.061301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The solubility and diffusivity of Cr atoms in 4H-SiC epilayers are investigated. The formation energy of 4H-SiC containing Cr has been calculated by first-principles calculation. Si sites have been found to be more stable than C sites or interstitial sites for Cr atoms owing to the lower formation energy. The solubility estimated from the formation energy coincides with the saturated Cr concentration in SiC crystals grown by solution growth. The diffusivity of implanted Cr atoms (located at interstitial sites) was not affected by the charge states of Cr atoms and/or vacancies such as carbon vacancies and silicon vacancies, implying the interstitial diffusion of Cr atoms. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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