Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering

被引：24

作者：

He, Hong ^{[1
,2
]}

Cao, Yongge ^{[1
]}

Fu, Renli ^{[2
]}

Wang, Hai ^{[1
]}

Huang, Jiquan ^{[1
]}

Huang, Changgang ^{[1
]}

Wang, Meili ^{[1
]}

Deng, Zhonghua ^{[1
]}

机构：

[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China

[2] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 07期

关键词：

FUNDAMENTAL-BAND GAP; ELECTRONIC-STRUCTURE; BRAGG MIRRORS; THIN-FILMS; EPITAXY; HETEROSTRUCTURES; ABSORPTION; ALXIN1-XN; ALLOYS; ALINN;

D O I：

10.1007/s10854-009-9976-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structure and optical properties of InN and In-rich InAlN films grown by magnetron sputtering were investigated. The XRD results show that these films are highly c-axis oriented. The film morphology and microstructure of these films were observed by AFM and SEM which reveals that the films grown in island growth mode. Optical properties of these films were studied by absorption method. The band gap energy of the InN film grown under substrate temperature of 400 A degrees C is 1.38 eV. By studying the E (g) values of InN films deposited under different substrate temperature, the Burstein-Moss effect on band gap of InN was examined. The significant band gap bowing of our In-rich InAlN films was found to be correlated with the In contents. The bowing parameter of 3.68 eV was obtained which is in agreement with previous theoretical predictions.

引用

页码：676 / 681

页数：6

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