Building MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts for efficient hydrogen evolution reaction

被引:62
作者
Geng, Shuo [1 ]
Yang, Weiwei [1 ]
Yu, Yong Sheng [1 ]
机构
[1] Harbin Inst Technol, MIIT Key Lab Crit Mat Technol New Energy Convers, Sch Chem & Chem Engn, Harbin 150001, Heilongjiang, Peoples R China
基金
中国国家自然科学基金;
关键词
g-C3N4; Conductivity; MoS2; Electron structure; ACTIVE EDGE SITES; MOS2 ULTRATHIN NANOSHEETS; SULFUR VACANCIES; COMPOSITE; CATALYST;
D O I
10.1016/j.jcat.2019.06.026
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Developing the stable and efficient hydrogen evolution reaction (HER) electrocatalyst is greatly desirable for the production of hydrogen as a clean energy resource. Herein, we report a simple and effective approach to fabricate MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts, which can adjust the electron structure, enhance the charge transfer rate and expose more active sites of MoS2 for HER. The optimized MoS2-C3N4 -60 sample shows a small onset overpotential as low as 115 mV, a low overpotential of 173 mV to achieve current density of 10 mA/cm(2), a low Tafel slope of 53 mV decade(-1), and a high turnover frequency of 0.16 H-2 s(-1) per active site at eta = 150 mV. This finding proposes a new strategy to fabricate 2D layered heterojunction for enhancing HER performance by rationally coupling two similar layered materials. (C) 2019 Elsevier Inc. All rights reserved.
引用
收藏
页码:441 / 447
页数:7
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