Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

被引：145

作者：

Oejefors, Erik ^{[1
]}

Heinemann, Bernd ^{[2
]}

Pfeiffer, Ullrich R. ^{[1
]}

机构：

[1] Berg Univ Wuppertal, Inst High Frequency & Commun Technol, D-42119 Wuppertal, Germany

[2] Innovat High Performance Microelect IHP GmbH, D-15236 Frankfurt, Oder, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2011年 / 59卷 / 05期

关键词：

Frequency multipliers; heterojunction bipolar transistor (HBT); millimeter-wave integrated circuits; silicon; submillimeter waves; GHZ;

D O I：

10.1109/TMTT.2011.2114364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 325-GHz x 18 frequency multiplier chain implemented in a f(T)/f(max) = 250 GHz/380 evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220-and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420mW, respectively.

引用

页码：1311 / 1318

页数：8

共 21 条

[1] Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation [J].

Abbasi, Morteza ;

Kozhuharov, Rumen ;

Kaernfelt, Camilla ;

Angelov, Iltcho ;

Kallfass, Ingmar ;

Leuther, Arnulf ;

Zirath, Herbert .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (12) :3134-3142

[2]

Chantre A, 2010, EUR MICROW INTEGRAT, P21

[3] An all-solid-state broad-band frequency multiplier chain at 1500 GHz [J].

Chattopadhyay, G ;

Schlecht, E ;

Ward, JS ;

Gill, JJ ;

Javadi, HHS ;

Maiwald, F ;

Medhi, I .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (05) :1538-1547

[4] High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches [J].

Heinemann, B. ;

Barth, R. ;

Knoll, D. ;

Ruecker, H. ;

Tillack, B. ;

Winkler, W. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (01) :S153-S157

[5]

Heinemann B., 2010, 2010 IEEE International Electron Devices Meeting (IEDM 2010), DOI 10.1109/IEDM.2010.5703452

[6] Terahertz CMOS Frequency Generator Using Linear Superposition Technique [J].

Huang, Daquan ;

LaRocca, Tim R. ;

Chang, Mau-Chung Frank ;

Samoska, Lorene ;

Fung, Andy ;

Campbell, Richard L. ;

Andrews, Michael .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (12) :2730-2738

[7] High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers [J].

Hung, JJ ;

Hancock, TM ;

Rebeiz, GM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) :754-761

[8]

Kallfass I, 2009, 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), P200

[9]

Maas S. A., 2003, ARTECH MICR

[10] A 325 GHz Frequency Multiplier Chain in a SiGe HBT Technology [J].

Oejefors, Erik ;

Heinemann, Bernd ;

Pfeiffer, Ullrich R. .

2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, :91-94

← 1 2 3 →