Impact of the Topological Surface State on the Thermoelectric Transport in Sb2Te3 Thin Films

被引：59

作者：

Hinsche, Nicki F. ^{[1
]}

Zastrow, Sebastian ^{[2
]}

Gooth, Johannes ^{[2
]}

Pudewill, Laurens ^{[2
]}

Zierold, Robert ^{[2
]}

Rittweger, Florian ^{[3
]}

Rauch, Tomas ^{[1
]}

Henk, Juergen ^{[1
]}

Nielsch, Kornelius ^{[2
]}

Mertig, Ingrid ^{[1
,3
]}

机构：

[1] Univ Halle Wittenberg, Inst Phys, D-06099 Halle, Germany

[2] Univ Hamburg, Inst Nanostruct & Solid State Phys, D-20355 Hamburg, Germany

[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

ACS NANO | 2015年 / 9卷 / 04期

关键词：

topological insulators; thermoelectrics; thin films; density functional theory (DFT); atomic layer deposition (ALD); surface states; thermopower; four-terminal measurements; INSULATORS; BI2SE3; FIGURE; BI2TE3;

D O I：

10.1021/acsnano.5b00896

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb2Te3 films are presented. The thickness-dependent electrical conductivity and the thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Contributions of the bulk and the surface to the transport coefficients are separated, which enables to identify a clear impact of the topological surface state on the thermoelectric properties. When the charge carrier concentration is tuned, a crossover between a surface-state-dominant and a Fuchs-Sondheimer transport regime is achieved. The calculations are corroborated by thermoelectric transport measurements on Sb2Te3 films grown by atomic layer deposition.

引用

页码：4406 / 4411

页数：6

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