Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

被引：21
作者：
Wang, YQ
Liao, XB
Ma, ZX
Yue, GZ
Diao, HW
He, J
Kong, GL
Zhao, YW
Li, ZM
Yun, F
机构：
[1] Chinese Acad Sci, Inst Semicond, Solid State Phys Lab, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China
[3] Beijing Solar Energy Res Inst, Beijing 100083, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 1998年 / 135卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
amorphous silicon; solid-phase crystallization; rapid thermal annealing;
D O I：
10.1016/S0169-4332(98)00230-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by PECVD. The solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/l-s 850 degrees C thermal pulse. A mean grain size more than 1000 Angstrom and a Hall mobility of 24.9 cm(2)/V s are obtained in the crystallized films. The results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：205 / 208
页数：4
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