Lateral crystalline grain growth by combination of laser irradiation with rapid substrate heating

被引：8

作者：

Andoh, N ^{[1
]}

Sameshima, T ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Tokyo 1848588, Japan

来源：

POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS | 2003年 / 93卷

关键词：

lateral growth; rapid heating; temperature gradient;

D O I：

10.4028/www.scientific.net/SSP.93.179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on lateral crystalline grain growth of silicon thin films by a combination of pulsed laser irradiation with rapid substrate heating. A Cr strip was heated by electrical current induced joule heating. Due to heat diffused from the Cr heater, a temperature gradient was formed in the lateral direction of the silicon films. The results of two-dimensional heat flow simulation and scanning electron microphotographs suggest that lateral crystalline grain growth occurred at temperature gradient of about 1.3 x 10(5) K/cm in the case of 1-10(4) W/cm(2) joule heating intensity. The crystalline grain size was 2similar to3 mum.

引用

页码：179 / 184

页数：6

共 17 条

[11] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].