Variation with composition of the properties in ZnSxSe1-x

被引：10

作者：

Hsu, CT ^{[1
]}

机构：

[1] Natl Huwei Inst Technol, Dept Elect Engn, Huwei 632, Yunlin, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 193卷 / 1-2期

关键词：

ZnSxSe1-x; lattice match; atomic layer epitaxy (ALE);

D O I：

10.1016/S0022-0248(98)00465-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of ZnSxSe1-x ranging in composition x from 0.12 to 0.93 were grown on (1 0 0)Si substrates by atomic layer epitaxy (ALE). The epilayers are examined by photoluminescence and X-ray diffraction patterns at 300 K. The lattice match occurs at a composition of x = 0.93. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：33 / 38

页数：6

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