Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

被引：33

作者：

Song, Yi ^{[1
]}

Mohseni, Parsian K. ^{[2
,3
]}

Kim, Seung Hyun ^{[1
]}

Shin, Jae Cheol ^{[4
]}

Ishihara, Tatsumi ^{[5
]}

Adesida, Ilesanmi ^{[1
]}

Li, Xiuling ^{[1
,5
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[3] Rochester Inst Technol, Rochester, NY 14623 USA

[4] Yeungnam Univ, Gyongsan 712749, South Korea

[5] Kyushu Univ, I2CNER, Fukuoka 8190395, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 08期

基金：

美国国家科学基金会;

关键词：

FinFET; high aspect ratio; metal-assisted chemical etching; junctionless; interface states; nanofabrication; NANOWIRE TRANSISTORS; FETS;

D O I：

10.1109/LED.2016.2577046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50: 1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 x 10(5)).

引用

页码：970 / 973

页数：4

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