LC-VCO Design With Dual-Gm, Boosted for RF Oscillation and Attenuated for LF Noise

被引：5

作者：

Koukab, Adil ^{[1
]}

机构：

[1] Swiss Fed Inst Technol Lausanne EPFL, CH-1015 Lausanne, Switzerland

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 12期

关键词：

Flicker noise; phase noise; power supply rejection (PSR); thermal noise; voltage-controlled oscillator (VCO); PHASE NOISE; IMPACT; CMOS;

D O I：

10.1109/LMWC.2010.2087011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A VCO topology with a high gm at RF and low gm at low frequencies (LF) is presented. A high gm(RF) improves start-up conditions, and a low gm(LF) enables a significant improvement of the phase noise and the power supply rejection. The VCO with a modified prescaler was implemented in 0.25 mu m CMOS technology. The measured phase is -128.5 dBc/Hz at 1 MH offset, when the VCO works at 3 GHz and consumes 7.5 mW. The corresponding figure of merit is 189.2 dBc/Hz/mW.

引用

页码：675 / 677

页数：3

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