Nanostructured porous silicon -: Optical properties, surface modification and sensor applications

被引:3
作者
Jelínek, I
Chvojka, T
Vrkoslav, V
Jindrich, J
Lorenc, M
Niznansky, D
Nemec, I
Král, V
Dian, J
机构
[1] Charles Univ Prague, Dept Analyt Chem, Fac Sci, Prague 12442 2, Czech Republic
[2] Charles Univ Prague, Dept Organ Chem, Prague 12442 2, Czech Republic
[3] Charles Univ Prague, Dept Inorgan Chem, Prague 12442 2, Czech Republic
[4] Inst Chem Technol, Dept Analyt Chem, CR-16628 Prague, Czech Republic
[5] Charles Univ Prague, Dept Chem Phys & Opt, Fac Math & Phys, Prague, Czech Republic
关键词
optical sensor; photoluminescence quenching; porous silicon; recognition enhancement;
D O I
10.2533/000942905777676498
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Porous silicon is a very attractive material due to its intense visible photoluminescence at room temperature. Its unique physical and chemical properties are determined by the porous structure where a nanosized silicon layer is formed during the electrochemical etching of crystalline silicon. So far, the high chemical reactivity of the porous silicon surface has prevented its extensive application in optoelectronics. Considerable effort has been put into the development of suitable techniques of stabilization. On the other hand, high chemical reactivity and sorption capacity of porous silicon represent the principal advantage for the construction of sensitive sensors of chemical species. This article provides a brief overview of the ongoing activities in the development of porous-silicon-based chemical sensors at the Charles University and at the Institute of Chemical Technology. So far, the detection of chemical species is based on the measurement of the changes in photoluminescence intensity and photoluminescence decay time, other complementary electrochemical and optical detection methods will follow in order to increase the selectivity of the detection. Another approach resulting in increased selectivity of sensor response utilizes the modification of porous silicon surface - either by physical adsorption or chemical derivatization - by various molecules with recognition properties. Due to the interdisciplinary nature of the research the involved scientists have built a network of collaborating laboratories specialized in various fields - material research, surface chemistry, design and synthesis of the molecules with recognition properties and sensor development.
引用
收藏
页码:222 / 225
页数:4
相关论文
共 24 条
  • [11] Mechanisms of photoluminescence sensor response of porous silicon for organic species in gas and liquid phases
    Chvojka, T
    Vrkoslav, V
    Jelínek, I
    Jindrich, J
    Lorenc, M
    Dian, J
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2004, 100 (1-2) : 246 - 249
  • [12] Optical porous silicon based sensors with chemically modified surface for detection of organic vapors
    Chvojka, T
    Holec, T
    Jelínek, I
    Nemec, I
    Jindrich, J
    Lorenc, M
    Koutníková, J
    Král, V
    Dian, J
    [J]. PHOTONICS, DEVICES, AND SYSTEMS II, 2003, 5036 : 51 - 56
  • [13] SEM and HRTEM study of porous silicon -: relationship between fabrication, morphology and optical properties
    Dian, J
    Macek, A
    Niznansky, D
    Nemec, I
    Vrkoslav, V
    Chvojka, T
    Jelínek, I
    [J]. APPLIED SURFACE SCIENCE, 2004, 238 (1-4) : 169 - 174
  • [14] Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects
    Fellah, S
    Wehrspohn, RB
    Gabouze, N
    Ozanam, F
    Chazalviel, JN
    [J]. JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 109 - 113
  • [15] GOPEL W, 1995, SENSORS COMPREHENSIV, V8, P295
  • [16] Gregg S. J., 1967, ADSORPTION SURFACE A
  • [17] Determination of sensoric parameters of porous silicon in sensing of organic vapors
    Holec, T
    Chvojka, T
    Jelínek, I
    Jindrich, J
    Nemec, I
    Pelant, I
    Valenta, J
    Dian, J
    [J]. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2): : 251 - 254
  • [18] THE LUMINESCENCE OF POROUS SI - THE CASE FOR THE SURFACE-STATE MECHANISM
    KOCH, F
    PETROVAKOCH, V
    MUSCHIK, T
    [J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 271 - 281
  • [19] Chemical limitations of macropore formation on medium-doped p-type silicon
    Lust, S
    Lévy-Clément, C
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (06) : C338 - C344
  • [20] Surface chemistry of luminescent silicon nanocrystallites
    Sailor, MJ
    Lee, EJ
    [J]. ADVANCED MATERIALS, 1997, 9 (10) : 783 - +