Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors

被引：0

作者：

Goller, Maximilian ^{[1
]}

Franke, Joerg ^{[1
]}

Lutz, Josef ^{[1
]}

Basler, Thomas ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Reichenhainer Str 70, Chemnitz, Germany

来源：

2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE) | 2021年

关键词：

<< Power cycling >>; << Gallium Nitride (GaN)>>; << TSEP >>; << Reliability >>; << Wide bandgap devices >>;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The reliability of discrete GaN Gate Injection Transistors (GIT) in power cycling tests (PCT) was evaluated. The investigation in this paper reveal that discrete GaN GITs achieved several times the lifetime expected by discrete power device lifetime model for Si IGBTs [1]. The large number of Au nailhead bonds, which are placed at the edge of the chip, combined with a strong lateral temperature gradient on chip level can explain this. The power cycling was also a long-time stress of the gate with DC gate current in combination with a cycling drain current. No significant change in parameters was found.

引用

页数：7

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