Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors

被引：0

作者：

Goller, Maximilian ^{[1
]}

Franke, Joerg ^{[1
]}

Lutz, Josef ^{[1
]}

Basler, Thomas ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Reichenhainer Str 70, Chemnitz, Germany

来源：

2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE) | 2021年

关键词：

<< Power cycling >>; << Gallium Nitride (GaN)>>; << TSEP >>; << Reliability >>; << Wide bandgap devices >>;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The reliability of discrete GaN Gate Injection Transistors (GIT) in power cycling tests (PCT) was evaluated. The investigation in this paper reveal that discrete GaN GITs achieved several times the lifetime expected by discrete power device lifetime model for Si IGBTs [1]. The large number of Au nailhead bonds, which are placed at the edge of the chip, combined with a strong lateral temperature gradient on chip level can explain this. The power cycling was also a long-time stress of the gate with DC gate current in combination with a cycling drain current. No significant change in parameters was found.

引用

页数：7

共 50 条

[1] Thermal measurement of dissipated power for Gallium Nitride Gate Injection Transistors
Wydzgowski, L.
Tarczewski, T.
Grzesiak, L. M.
2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
[2] An Accurate Compact Model For Gallium Nitride Gate Injection Transistor For Next Generation of Power Electronics Design
Kotecha, Ramchandra M.
Zhang, Yuzhi
Wallace, Andrea
Zhu, Nan
Rashid, Arman
Vrotsos, Tom
Mantooth, H. Alan
2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL), 2017,
[3] Comparison of Power Cycling Results of discrete GaN Cascodes for Automotive Power Electronics with high Temperature Swings
Lippold, Florian
Hauenschild, Philipp
Mallwitz, Regine
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE), 2022,
[4] Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors
Shah, Krushal
Shenai, Krishna
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) : 2735 - 2741
[5] Impact of Dormancy Periods on Power Cycling of Insulated Gate Bipolar Transistors (IGBTs)
Valentine, Nathan
Das, Diganta
2016 IEEE ACCELERATED STRESS TESTING & RELIABILITY CONFERENCE (ASTR), 2016,
[6] Very Fast Short Circuit Protection for Gallium-Nitride Power Transistors Based on Printed Circuit Board Integrated Current Sensor
Acuna, Javier
Walter, Janes
Kallfass, Ingmar
2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE), 2018,
[7] Surge Energy Robustness of GaN Gate Injection Transistors
Zhang, Ruizhe
Kozak, Joseph P.
Liu, Jingcun
Xiao, Ming
Zhang, Yuhao
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
[8] Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors
Nicola, Modolo
De Santi, Carlo
Minetto, Andrea
Sayadi, Luca
Sicre, Sebastien
Prechtl, Gerhard
Meneghesso, Gaudenzio
Zanoni, Enrico
Meneghini, Matteo
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (01)
[9] Gate stack engineering for GaN lateral power transistors
Yang, Shu
Liu, Shenghou
Liu, Cheng
Hua, Mengyuan
Chen, Kevin J.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (02)
[10] Optimizing Insulated-Gate Bipolar Transistors' Lifetime Estimation: A Critical Evaluation of Lifetime Model Adjustments Based on Power Cycling Tests
Alavi, Omid
De Ceuninck, Ward
Daenen, Michael
ENERGIES, 2024, 17 (11)

← 1 2 3 4 5 →