Silicon dual pillar structure with a distributed Bragg reflector for dielectric laser accelerators: Design and fabrication

被引：8

作者：

Yousefi, Peyman ^{[1
]}

McNeur, Joshua ^{[1
]}

Kozak, Martin ^{[1
]}

Niedermayer, Uwe ^{[2
]}

Gannott, Florentina ^{[3
]}

Lohse, Olga ^{[3
]}

Boine-Frankenheim, Oliver ^{[2
]}

Hommelhoff, Peter ^{[1
,3
]}

机构：

[1] Friedrich Alexander Univ Erlangen Nurnberg, Dept Phys, Staudtstr 1, D-91058 Erlangen, Germany

[2] Tech Univ Darmstadt, TEMF, Schlossgartenstr 8, D-64289 Darmstadt, Germany

[3] Max Planck Inst Sci Light, Staudtstr 2, D-91058 Erlangen, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2018年 / 909卷

关键词：

Dielectric laser accelerators; Dual pillar structure; Distributed Bragg reflector; Electron beam lithography; Cryogenic reactive ion etching; KEV ELECTRONS;

D O I：

10.1016/j.nima.2018.01.065

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Dielectric laser accelerators (DLAs) have proven to be good candidates for miniaturized particle accelerators. They rely on micro-fabricated dielectrics which are able to modulate the kinetic energy of the incoming electron beam under a proper laser illumination. In this paper we demonstrate a dual pillar structure with a distributed Bragg reflector to mimic a double sided illumination to the electron path. The structure is fabricated by an electron beam lithography technique followed by a cryogenic reactive ion etching process. Such a structure can accelerate the injected 28 keV electrons by a gradient of approximately 150 MeV/m which can be further optimized towards the GeV/m regime. (c) 2018 Elsevier B.V. All rights reserved.

引用

页码：221 / 223

页数：3

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