Ball impact responses of Ni- or Ge-doped Sn-Ag-Cu solder joints

被引:27
作者
Lai, Yi-Shao
Song, Jenn-Ming [1 ]
Chang, Hsiao-Chuan
Chiu, Ying-Ta
机构
[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Hualien 974, Taiwan
关键词
ball impact test (BIT); solder joint; substrate pad surface finish; board-level drop reliability;
D O I
10.1007/s11664-007-0319-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we present ball impact test (BIT) responses and fractographies obtained at an impact velocity of 500 mm/s on Sn-4Ag-0.5Cu, Sn-1Ag-0.5Cu, Sn-1Ag-0.5Cu-0.05Ni, Sn-1.2Ag-0.5Cu-0.05Ni, and Sn-1Ag-0.5Cu-0.05Ge package-level solder joints. The solder joints are bonded on substrate pads of either immersion tin (IT) or direct solder on pad (DSOP) surface finishes. Differences of BIT results with respect to multi-reflow are also reported. Taking the impact energy as an indication of board-level drop reliability of the solder joints, the BIT results indicate that better reliability can be achieved by adopting Sn-Ag-Cu solder alloys with low Ag weight contents as well as IT substrate pad finish rather than DSOP. Moreover, the addition of Ni or Ge to the solder alloy provides a large improvement; Ni alters the interfacial intermetallic compound (IMC) structure while Ge enhances the mechanical behavior of the bulk solder.
引用
收藏
页码:201 / 209
页数:9
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