Voltage Divider for Self-Limited Analog State Programing of Memristors

被引:13
作者
Gomez, Jorge [1 ]
Vourkas, Ioannis [2 ]
Abusleme, Angel [1 ]
Sirakoulis, Georgios Ch. [3 ]
Rubio, Antonio [4 ]
机构
[1] Pontificia Univ Catolica Chile, Dept Elect Engn, Santiago 7820436, Chile
[2] Univ Tecn Federico Santa Maria, Dept Elect Engn, Valparaiso 2390123, Chile
[3] Democritus Univ Thrace, Dept Elect & Comp Engn, GR-67100 Xanthi, Greece
[4] Univ Politecn Cataluna, Dept Elect Engn, Barcelona 08034, Spain
关键词
Memristor; resistive switching; ReRAM; multi-level memory; voltage divider; Knowm; Digilent AD2;
D O I
10.1109/TCSII.2019.2923716
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resistive switching devices-memristors-present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.
引用
收藏
页码:620 / 624
页数:5
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