Thickness effects of Bi0.89Ti0.11FeO3 thin films deposited on PbZr0.2Ti0.79Nb0.01O3 buffer layers

被引：7

作者：

Chen, X. M. ^{[1
]}

Hu, G. D. ^{[1
]}

Wang, J. C. ^{[1
]}

Cheng, L. ^{[1
]}

Yang, C. H. ^{[1
]}

Wu, W. B. ^{[1
]}

机构：

[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Ferroelectrics; Thin films; Chemical synthesis; Electronic properties;

D O I：

10.1016/j.jallcom.2010.09.049

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bi0.89Ti0.11FeO3 thin films with the thicknesses of 200-440 nm were fabricated on the 40-nm-thick PbZr0.2Ti0.79Nb0.01O3 (PZTN)-buffered Pt(1 1 1)/Ti/SiO2/Si substrates using a metal organic decomposition process. As a result of the good insulating property and high breakdown characteristic of the PZTN buffer layer, the leakage currents in the Bi0.89Tb0.11FeO3 films are significantly reduced. All the films show well-saturated and rectangular P-E hysteresis loops without any evident leaky behavior. The remnant polarization P-r and coercive field E, for all Bi0.89Ti0.11FeO3 films are around 45-50 mu C/cm(2) and 200 kV/cm, respectively, and show weak dependent on the film thickness. The 200-nm-thick Bi0.89Ti0.11FeO3 film exhibits better fatigue-free characteristic and charge-retaining ability, and the domain backswitching is significantly restrained due to the strong anti-aging ability of the PZTN buffer layer. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：431 / 434

页数：4

共 18 条

[1] Large Piezoelectric Coefficient in Tb-Doped BiFeO3 Films [J].

Chen, Xuemei ;

Hu, Guangda ;

Wu, Weibing ;

Yang, Changhong ;

Wang, Xi ;

Fan, Suhua .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2010, 93 (04) :948-950

[2] Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFeO3/Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin film [J].

Cheng, ZX ;

Wang, XL ;

Kannan, CV ;

Ozawa, K ;

Kimura, H ;

Nishida, T ;

Zhang, SJ ;

Shrout, TR .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[3] Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution [J].

Chu, Y. H. ;

Zhan, Q. ;

Yang, C. -H. ;

Cruz, M. P. ;

Martin, L. W. ;

Zhao, T. ;

Yu, P. ;

Ramesh, R. ;

Joseph, P. T. ;

Lin, I. N. ;

Tian, W. ;

Schlom, D. G. .

APPLIED PHYSICS LETTERS, 2008, 92 (10)

[4] Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering [J].

Das, R. R. ;

Kim, D. M. ;

Baek, S. H. ;

Eom, C. B. ;

Zavaliche, F. ;

Yang, S. Y. ;

Ramesh, R. ;

Chen, Y. B. ;

Pan, X. Q. ;

Ke, X. ;

Rzchowski, M. S. ;

Streiffer, S. K. .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[5] Large electric polarization and exchange bias in multiferroic BiFeO3 [J].

Dho, Joonghoe ;

Qi, Xiaoding ;

Kim, Hyunho ;

MacManus-Driscoll, Judith L. ;

Blamire, Mark G. .

ADVANCED MATERIALS, 2006, 18 (11) :1445-+

[6]

Haccart I, 2003, THIN SOLID FILMS, V423, P235

[7] Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO3 thin film [J].

Hu, G. D. ;

Fan, S. H. ;

Yang, C. H. ;

Wu, W. B. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[8] Enhanced multiferroic properties of BiFeO3 thin films by Nd and high-valence Mo co-doping [J].

Hu, Zhongqiang ;

Li, Meiya ;

Yu, Benfang ;

Pei, Ling ;

Liu, Jun ;

Wang, Jing ;

Zhao, Xingzhong .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (18)

[9] Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films [J].

Jang, Ho Won ;

Ortiz, Daniel ;

Baek, Seung-Hyub ;

Folkman, Chad M. ;

Das, Rasmi R. ;

Shafer, Padraic ;

Chen, Yanbin ;

Nelson, Christofer T. ;

Pan, Xiaoqing ;

Ramesh, Ramamoorthy ;

Eom, Chang-Beom .

ADVANCED MATERIALS, 2009, 21 (07) :817-+

[10] Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr0.5,Ti0.5)O3 multilayer films derived by chemical solution deposition -: art. no. 182902 [J].

Li, YW ;

Sun, JL ;

Chen, J ;

Meng, XJ ;

Chu, JH .

APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3

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