Radiation effects in a CMOS active pixel sensor

被引：98

作者：

Hopkinson, GR ^{[1
]}

机构：

[1] Sira Electroopt Ltd, Chislehurst BR7 5EH, Kent, England

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期

关键词：

D O I：

10.1109/23.903796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100 degrees C, Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not Set been established.

引用

页码：2480 / 2484

页数：5

共 13 条

[1]

Berger G., 1997, RADECS WORKSH, P51

[2]

BOGAERTS J, 2000, P SPIE PHOT W SAN JO

[3] ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN SILICON [J].

BURKE, EA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1276-1281

[4]

COHEN M, 2000, P RADECS 1999, P450

[5] Total dose testing of a CMOS charged particle spectrometer [J].

Hancock, BR ;

Soli, GA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :1957-1964

[6]

Hopkinson G. R., 1994, P RADECS 93 IEEE, P401

[7]

Hopkinson GR, 1997, NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, P218

[8]

HOPKINSON GR, 1992, P RADECS 91, P327

[9]

Liebe CC, 1998, AEROSP CONF PROC, P119, DOI 10.1109/AERO.1998.686811

[10] CMOS active pixel image sensor with CCD performance [J].

Meynants, G ;

Dierickx, B ;

Scheffer, D .

ADVANCED FOCAL PLANE ARRAYS AND ELECTRONIC CAMERAS II, 1998, 3410 :68-76

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