Ferroelectric polarization relaxation in Au/Cu2O/ZnO/BiFeO3/Pt heterostructure

被引：18
|
作者：
Fan, Zhen [1 ,2 ]
Xiao, Juanxiu [3 ]
Yao, Kui [2 ]
Zeng, Kaiyang [3 ]
Wang, John [1 ]
机构：
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117548, Singapore
[2] ASTAR, Inst Mat Res & Engn, Singapore, Singapore
[3] Natl Univ Singapore, Dept Mech Engn, Singapore 117548, Singapore
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 10期
关键词：
FIELD-EFFECT TRANSISTOR; THEORETICAL STABILITY; DEPOLARIZATION-FIELD; INSTABILITY; FILMS;
D O I：
10.1063/1.4914883
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The stability of polarization in ferroelectric BiFeO3 thin film stacked with a p-n junction of Cu2O/ZnO was studied in the Au/Cu2O/ZnO/BiFeO3/Pt heterostructure. It was observed that the downward ferroelectric polarization of BiFeO3 gradually relaxes once the external electric field is removed, which is driven by the depolarization effect induced by the reduction of compensating charges due to the charge redistribution within Cu2O/ZnO. This work contributes to an improved understanding on the polarization behavior in multilayer thin film structures comprising ferroelectrics and p-n junctions for guiding relevant device design and performance analysis. (C) 2015 AIP Publishing LLC.
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页数：5
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