Performance limits of monolayer 1T' - ReS2 nanoscale MOSFETs

被引：0

作者：

Sengupta, Amretashis ^{[1
,2
,3
,4
]}

机构：

[1] Hanse Wissenschaftskolleg Inst Adv Study, D-27753 Delmenhorst, Germany

[2] Hanse Wissenschaftskolleg Inst Adv Study, D-27753 Delmenhorst, Germany

[3] Univ Bremen, BCCMS, D-28359 Bremen, Germany

[4] IIEST, Sch VLSI Technol, Sibpur 711103, Howrah, India

来源：

2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the emerging 2 dimensional (2D) material ReS2 is studied for its performance as channel material in next generation deeper nanoscale MOSFET. Combining ab-initio material simulations and non-equilibrium Green's function (NEGF) based transport calculations, we studied monolayer ReS2 nMOS devices of 5, 10 and 15nm channel length. The 5nm ReS2 FET shows promise as logic device with drive currents of 235.1 mu A/mu m, ON/OFF ratio of similar to 10(4) and good DIBL suppression. The direct tunneling leakage issues were not found to be significant down to 5nm channel length.

引用

页码：62 / 63

页数：2

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