Performance limits of monolayer 1T' - ReS2 nanoscale MOSFETs

被引：0

作者：

Sengupta, Amretashis ^{[1
,2
,3
,4
]}

机构：

[1] Hanse Wissenschaftskolleg Inst Adv Study, D-27753 Delmenhorst, Germany

[2] Hanse Wissenschaftskolleg Inst Adv Study, D-27753 Delmenhorst, Germany

[3] Univ Bremen, BCCMS, D-28359 Bremen, Germany

[4] IIEST, Sch VLSI Technol, Sibpur 711103, Howrah, India

来源：

2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the emerging 2 dimensional (2D) material ReS2 is studied for its performance as channel material in next generation deeper nanoscale MOSFET. Combining ab-initio material simulations and non-equilibrium Green's function (NEGF) based transport calculations, we studied monolayer ReS2 nMOS devices of 5, 10 and 15nm channel length. The 5nm ReS2 FET shows promise as logic device with drive currents of 235.1 mu A/mu m, ON/OFF ratio of similar to 10(4) and good DIBL suppression. The direct tunneling leakage issues were not found to be significant down to 5nm channel length.

引用

页码：62 / 63

页数：2

共 50 条

[31] Raman Scattering Modification in Monolayer ReS2 Controlled by Strain Engineering [J].

Li, Ting-Hui ;

Zhou, Zi-Heng ;

Guo, Jun-Hong ;

Hu, Fang-Ren .

CHINESE PHYSICS LETTERS, 2016, 33 (04)

[32] Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling [J].

Sefaattin Tongay ;

Hasan Sahin ;

Changhyun Ko ;

Alex Luce ;

Wen Fan ;

Kai Liu ;

Jian Zhou ;

Ying-Sheng Huang ;

Ching-Hwa Ho ;

Jinyuan Yan ;

D. Frank Ogletree ;

Shaul Aloni ;

Jie Ji ;

Shushen Li ;

Jingbo Li ;

F. M. Peeters ;

Junqiao Wu .

Nature Communications, 5

[33] Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x)Se2x Alloys with Distorted 1T Structure [J].

Wen, Wen ;

Zhu, Yiming ;

Liu, Xuelu ;

Hsu, Hung-Pin ;

Fei, Zhen ;

Chen, Yanfeng ;

Wang, Xinsheng ;

Zhang, Mei ;

Lin, Kuan-Hung ;

Huang, Fei-Sheng ;

Wang, Yi-Ping ;

Huang, Ying-Sheng ;

Ho, Ching-Hwa ;

Tan, Ping-Heng ;

Jin, Chuanhong ;

Xie, Liming .

SMALL, 2017, 13 (12)

[34] Highly enhanced performance for sensing by monolayer 1T' WS2 with atomic vacancy [J].

Wang, Weiqi ;

Cao, Jiamu ;

Zhou, Jing ;

Chen, Junyu ;

Liu, Junfeng ;

Deng, Huichao ;

Zhang, Yufeng ;

Liu, Xiaowei .

MICROELECTRONIC ENGINEERING, 2020, 223

[35] 1T′-ReS2 Nanosheets In Situ Grown on Carbon Nanotubes as a Highly Efficient Polysulfide Electrocatalyst for Stable Li-S Batteries [J].

He, Jiarui ;

Bhargav, Amruth ;

Yaghoobnejad Asl, Hooman ;

Chen, Yuanfu ;

Manthiram, Arumugam .

ADVANCED ENERGY MATERIALS, 2020, 10 (23)

[36] Distorted Monolayer ReS2 with Low-Magnetic-Field Controlled Magnetoelectricity [J].

Zhang, Jinlei ;

Wu, Shuyi ;

Shan, Yun ;

Guo, JunHong ;

Yan, Shuo ;

Xiao, Shuyu ;

Yang, Chunbing ;

Shen, Jiancang ;

Chen, Jian ;

Liu, Lizhe ;

Wu, Xinglong .

ACS NANO, 2019, 13 (02) :2334-2340

[37] Structural, electronic, and magnetic properties of transition metal doped ReS2 monolayer [J].

M. Luo ;

Y. H. Shen ;

T. L. Yin .

JETP Letters, 2017, 105 :255-259

[38] Quantum spin Hall state in monolayer 1T'-WTe 2 [J].

Tang S. ;

Zhang C. ;

Wong D. ;

Pedramrazi Z. ;

Tsai H.-Z. ;

Jia C. ;

Moritz B. ;

Claassen M. ;

Ryu H. ;

Kahn S. ;

Jiang J. ;

Yan H. ;

Hashimoto M. ;

Lu D. ;

Moore R.G. ;

Hwang C.-C. ;

Hwang C. ;

Hussain Z. ;

Chen Y. ;

Ugeda M.M. ;

Liu Z. ;

Xie X. ;

Devereaux T.P. ;

Crommie M.F. ;

Mo S.-K. ;

Shen Z.-X. .

Nature Physics, 1600, Nature Publishing Group (13) :683-687

[39] Topological phase transition in monolayer 1T′-MoS2 [J].

Nobahari, Mohammad Mortezaie ;

Roknabadi, Mahmood rezaei .

SCIENTIFIC REPORTS, 2025, 15 (01)

[40] Enhanced HER activity of transition metal cluster decorated ReS2 monolayer [J].

Aparna, M. P. ;

Chatanathodi, Raghu .

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2024, 51 :41-51

← 1 2 3 4 5 →