Performance limits of monolayer 1T' - ReS2 nanoscale MOSFETs

In this work the emerging 2 dimensional (2D) material ReS2 is studied for its performance as channel material in next generation deeper nanoscale MOSFET. Combining ab-initio material simulations and non-equilibrium Green's function (NEGF) based transport calculations, we studied monolayer ReS2 nMOS devices of 5, 10 and 15nm channel length. The 5nm ReS2 FET shows promise as logic device with drive currents of 235.1 mu A/mu m, ON/OFF ratio of similar to 10(4) and good DIBL suppression. The direct tunneling leakage issues were not found to be significant down to 5nm channel length.