Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate

被引：18

作者：

Qiao, Liang ^{[1
]}

Bi, Xiaofang ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Mat Sci & Engn, Key Lab Aerosp Mat & Performance, Minist Educ, Beijing 100191, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 11期

关键词：

BaTiO3; ferroelectrics; LaNiO3; strain; phase transitions; thin films; FERROELECTRIC PROPERTIES; DIELECTRIC-PROPERTIES; DOMAIN FORMATION; BUFFER LAYERS; THICKNESS; SI(001); MGO; SI;

D O I：

10.1002/pssa.201026271

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BaTiO3 (BTO) thin films of 100 nm were grown on Si substrates buffered with LaNiO3 (LNO) layers with various thicknesses. X-ray diffraction and strain analysis demonstrate that the BTO film grown on the LNO of 600 nm is in an in-plane compressive strain state. The remnant polarization of 10.2 mu C/cm(2) obtained for the film also indicates the presence of the compressive strain state. However, dielectric measurement reveals a phase transition temperature of 100 degrees C, lower than the typical value of 120 degrees C. The result is discussed in terms of the stiffening of soft mode in the center of Brillouin zone. The corresponding domain configuration is also investigated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2511 / 2516

页数：6

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