Low-temperature characteristics of a-Si H thin-film transistor under mechanical strain

被引：5

作者：

Tsao, S. W. ^{[2
]}

Chang, T. C. ^{[1
,2
,3
]}

Yang, P. C. ^{[2
]}

Wang, M. C.

Chen, S. C. ^{[1
]}

Lu, J. ^{[1
,5
,6
]}

Chang, T. S. ^{[4
]}

Kuo, W. C. ^{[1
]}

Wu, W. C. ^{[1
]}

Shi, Y. ^{[5
,6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[5] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[6] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 12期

关键词：

Amorphous silicon thin film transistors; Low temperature; Bending; AMORPHOUS-SILICON; ELECTRON-MOBILITY; CONDUCTION; TFT;

D O I：

10.1016/j.sse.2010.07.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of hydrogenated amorphous silicon thin film transistors (a Si H TFTs) fabricated on stainless steel foil substrates with uniaxial outward bending were investigated at low temperatures Temperatures ranging from 77 K to 300 K were applied with experimental results showing the degradation of on-state current and threshold voltage at low temperatures Compared with the flat situation the mobility of tensile strained a Si H TFTs decreased at temperatures above 150 K but remained almost the same at temperatures below 150 K This is because outward bending will induce increase of band tail states affecting the transport mechanism differently at different temperatures (C) 2010 Elsevier Ltd All rights reserved

引用

页码：1632 / 1636

页数：5

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