Atomically Thin MoS2: A New Direct-Gap Semiconductor

被引：10203

作者：

Mak, Kin Fai ^{[1
,2
]}

Lee, Changgu ^{[3
,4
]}

Hone, James ^{[5
]}

Shan, Jie ^{[6
]}

Heinz, Tony F. ^{[1
,2
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[3] Sungkyunkwan Univ, Dept Mech Engn, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[5] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[6] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 13期

基金：

美国国家科学基金会;

关键词：

TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-STRUCTURE; BAND-STRUCTURES; GROUP-VI; SPECTRA; SPECTROSCOPY; EVOLUTION; WSE2;

D O I：

10.1103/PhysRevLett.105.136805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ..., 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10(4) compared with the bulk material.

引用

页数：4

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