Spectroscopic ellipsometry of porphyrin adsorbed in porous silicon

被引：3
|
作者：
Babonas, GJ
Snitka, V
Rodaite, R
Simkiene, I
Reza, A
Treideris, M
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
[2] Kaunas Univ Technol, LT-51369 Kaunas, Lithuania
来源：
ACTA PHYSICA POLONICA A | 2005年 / 107卷 / 02期
关键词：
D O I：
10.12693/APhysPolA.107.319
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Aqueous solution of meso-tetra(4-sulfonatophenyl)porphine was deposited on electrochemically etched n-Si wafers. The morphology of the hybrid systems was investigated by scanning electron microscope and atomic force microscope techniques. The optical response of the hybrid systems was studied by spectroscopic ellipsometry in the range of 1-5 eV. Particular features in adsorption process were revealed for meso-tetra(4-sulfonatophenyl)porphine deposited on variously chemically treated Si substrates. It was found that porphyrin J-aggregates can be intercalated into large pores formed in a bulk n-Si as well as into nanopores of luminescent oxide layer.
引用
收藏
页码：319 / 323
页数：5
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