The improvement of liquid phase deposition of silicon dioxide with hydrochloric acid incorporation

被引:8
|
作者
Lee, MK [1 ]
Lin, CH [1 ]
Yang, CN [1 ]
Yang, CD [1 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80824, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6A期
关键词
LPD-SiO2; H2SiF6; HCl;
D O I
10.1143/JJAP.37.L682
中图分类号
O59 [应用物理学];
学科分类号
摘要
Liquid phase deposition of silicon dioxide (LPD-SiO2) provides the advantages of room temperature growth, good step coverage and selective growth, and has high potential in integrated circuit fabrications. In this paper, a simple method to improve the quality of LPD-SiO2 was developed with the incorporation of hydrochloric acid (HCl) which can enhance the deposition rate of LPD-SiO2. From the current-voltage and capacitance-voltage characteristics, the hat-hand voltage and leakage current were improved by HCl incorporation into LPD-SiO2 films.
引用
收藏
页码:L682 / L683
页数:2
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