The improvement of liquid phase deposition of silicon dioxide with hydrochloric acid incorporation

Liquid phase deposition of silicon dioxide (LPD-SiO2) provides the advantages of room temperature growth, good step coverage and selective growth, and has high potential in integrated circuit fabrications. In this paper, a simple method to improve the quality of LPD-SiO2 was developed with the incorporation of hydrochloric acid (HCl) which can enhance the deposition rate of LPD-SiO2. From the current-voltage and capacitance-voltage characteristics, the hat-hand voltage and leakage current were improved by HCl incorporation into LPD-SiO2 films.