The Study of 4H-SiC Alpha Particle Detectors with Different Schottky Contact Metallization

被引：4
|
作者：
Zat'ko, Bohumir [1 ]
Dubecky, Frantisek [1 ]
Ryc, Leszek [2 ]
Sagatova, Andrea [3 ,4 ]
Sedlackova, Katarina [3 ]
Kovacova, Eva [1 ]
Necas, Vladimir [3 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, SK-84104 Bratislava, Slovakia
[2] Inst Plasma Phys & Laser Microfus, PL-00908 Warsaw, Poland
[3] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Ilkovicova 3, SK-81219 Bratislava, Slovakia
[4] Slovak Med Univ, Univ Ctr Electron Accelerators, Ku Kyselke 497, SK-91106 Trencin, Slovakia
来源：
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2018) | 2018年 / 1996卷
关键词：
SILICON-CARBIDE;
D O I：
10.1063/1.5048903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of alpha particles. Two types of blocking contacts based on Ni/Au and Pt/Au were used. The total thickness of prepared blocking contacts was about 15 nm to minimize the influence on alpha particles energy resolution. Current-voltage characteristics of two types of detectors were measured at room temperature and compared. As a source of alpha particles we utilized triple radioisotope of Pu-239 Am-241 Cm-244. Detected alpha particles had energies from 5.1 MeV up to 5.8 MeV. The spectrometric performance of detectors with two types of blocking contacts were evaluated and compared.
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页数：5
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