Hole trapping in polydiacetylene field effect transistor studied by optical second harmonic generation

被引：0
作者：
Manaka, T.
Kohn, H.
Ohshima, Y.
Lim, E.
Iwamoto, M.
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8552
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 09期
关键词：
Carrier trap; Organic FET; Polydiacetylene; Second harmonic generation;
D O I：
10.1016/j.tsf.2007.04.116
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hole trapping in polydiacetylene field effect transistor (PDA-FET) was studied by the electric field induced second harmonic generation (EFISHG). Response of SHG signal from PDA-FET with an application of external voltage was monitored. Applying positive voltage to source and drain electrodes with respect to gate electrode, SHG signal was not observed during bias application, whereas the signal was enhanced after turning off the bias. Since positive bias promotes hole injection from source and drain electrodes, electric field formed by trapped holes in PDA layer activated the SHG signal. Microscopic SHG measurement implies that the trapped holes are concentrated around source and drain electrodes. © 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：2779 / 2782
页数：4
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