Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope

被引：3
作者：
Qiu Yun-Fei [1 ]
Du Wen-Han [1 ]
Wang Bing [1 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
来源：
ACTA PHYSICA SINICA | 2011年 / 60卷 / 03期
基金：
中国国家自然科学基金;
关键词：
pulsed laser deposition (PLD); scanning tunneling microscope (STM); SrTiO3; C54-TiSi2; THIN-FILMS; ELECTRICAL-PROPERTIES; TITANIUM SILICIDE; PHASE-TRANSITION; INTERFACE; ISLANDS; MECHANISM; OXIDES; SR;
D O I：
10.7498/aps.60.036801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SrTiO3 ultra-thin film was deposited on the Sr/Si (001) surface using pulsed laser deposition (PLD) at room temperature and studied using scanning tunneling microscopy (STM). After annealing at 660 degrees C for about 60 minutes in ultrahigh vacuum (UHV), nanosize islands were formed on the Sr/Si(001) surface. High resolution STM images and dI/dV mapping of islands on Sr/Si (001) were obtained. The islands can be attributed to TiSi2 islands with C49 and C54 structures. The existence of Sr on Si is not sufficient to prevent the reaction between Si and Ti in preparation of ultra-thin SrTiO3 films.
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页数：9
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