Mapping of single event burnout in power MOSFETs

被引：25
作者：
Haran, Avner [1 ]
Barak, Joseph [1 ]
David, David [1 ]
Refaeli, Nati [1 ]
Fischer, Bernd E. [2 ]
Voss, Kay-Obbe [2 ]
Du, Guanghua [2 ]
Heiss, Markus [2 ]
机构：
[1] Soreq NRC, IL-81800 Yavne, Israel
[2] GSI Darmstadt, D-64291 Darmstadt, Germany
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期
关键词：
alpha particles; heavy ion mapping; HEXFET; microbeam; power MOSFET; single event burnout (SEB); single event gate rupture (SEGR);
D O I：
10.1109/TNS.2007.910851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Direct heavy ion mapping of single-event burnout (SEB) in power MOSFETs is presented for the first time utilizing the GSI microprobe with Xe and Ar ion beams. The mapping results indicate that the source and the channel of the power MOSFET are the most sensitive areas to SEB. Correlation to charge collection mapping, as well as the difference between the mapping results of the two ion beams are discussed.
引用
收藏
页码：2488 / 2494
页数：7
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