Towards quantitative understanding of formation and stability of Ge hut islands on Si(001)

被引：117

作者：

Lu, GH ^{[1
]}

Liu, F

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Beijing 100083, Peoples R China

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.94.176103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We analyze Ge hut island formation on Si(001), using first-principles calculations of energies, stresses, and their strain dependence of Ge/Si(105) and Ge/Si(001) surfaces combined with continuum modeling. We give a quantitative assessment on strain stabilization of Ge(105) facets, estimate the critical size for hut nucleation or formation, and evaluate the magnitude of surface stress discontinuity at the island's edge and its effect on island stability.

引用

页数：4

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