Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN

被引：20

作者：

Zhuang, Zhe ^{[1
]}

Iida, Daisuke ^{[1
]}

Velazquez-Rizo, Martin ^{[1
]}

Ohkawa, Kazuhiro ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia

来源：

OPTICS LETTERS | 2021年 / 46卷 / 20期

关键词：

Light emitting diodes - Gallium alloys - Indium alloys - Fabrication - Semiconductor quantum wells - III-V semiconductors - Atoms - Passivation - Plasma applications - Electric resistance - Etching - Semiconductor alloys;

D O I：

10.1364/OL.438009

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Here, we proposed fabricating ultra-small InGaN-based micro-light-emitting diodes (mu LEDs). The selective p-GaN areas were intentionally passivated using a H-2 plasma treatment and served as the electrical isolation regions to prevent the current from injecting into the InGaN quantum wells below. Three kinds of green mu LEDs, two squircle shapes with widths of 5 and 4 mu m and one circular shape with a diameter of 2.7 mu m, were successfully realized. The currentvoltage characteristics indicate that the series resistance and the turn-on voltage increase as the dimension of the mu LED decreases. This originates from the diffusion of the hydrogen atoms into the unexpected conductive p-GaN area. The light output power density and the calculated external quantum efficiency of the mu LEDs from a 5-mu m-squircle to a 2.7-mu m-circle were enhanced by 10 20% when compared to 98 x 98 mu m(2) mu LEDs that were fabricated using mesa etching. (C) 2021 Optical Society of America

引用

页码：5092 / 5095

页数：4