Transport characterization of silicon-YBCO buffered multilayers deposited by magnetron sputtering

被引：1
|
作者：
Chiodoni, A [1 ]
Camerlingo, C
Gerbaldo, R
Gozzelino, L
Laviano, F
Minetti, B
Pirri, CF
Rombolà, G
Tallarida, G
Tresso, E
Mezzetti, E
机构：
[1] Politecn Torino, INFM, UdR, I-10129 Turin, Italy
[2] Ist Nazl Fis Nucl, Sez Turin, I-10129 Turin, Italy
[3] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[4] CNR, Ist Cibernet, I-80078 Pozzuoli, Na, Italy
[5] INFM, Lab MDM, I-20041 Agrate Brianza, Mi, Italy
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2005年 / 15卷 / 02期
关键词：
magnetron sputtering; resistance measurement; superconducting film; superconductor-semiconductor devices;
D O I：
10.1109/TASC.2005.848739
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reports on results concerning the Si/YSZ/CeO2/YBCO multilayer prepared by means of magnetron sputtering. Such multilayer is considered for the possibility to compound the integration of YBCO films with silicon-based devices, with the unique, in perspective, properties of YBCO concerning photon sensors. We characterized YBCO films in such multilayer configuration by means of structural and dc transport measurements. It turns out that some granularity affects the transport properties of the YBCO film and lowers the critical currents. However, the lower temperature E - J characteristics are sharp enough to consider exploiting the transition between under critical and over critical (flux flow) state for future silicon-integrated broad-band photon sensors.
引用
收藏
页码：3062 / 3065
页数：4
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