Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

beta-SiC nanowires were synthesized by using an improved simple and low-cost thermal evaporation process at 1500 degrees C, without argon protect and catalyst assistant. The process simplifies the chemical vapor deposition method, which makes it easier to operate and industrialize. X-ray diffraction, Field emission scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive spectrum were employed to characterize the as-synthesized products. The beta-SiC nanowires are about 50-100 nm in diameter, up to several micrometers long and usually grow along [111] direction with a thin oxide shell. A vapor-solid growth mechanism of the nanowires is proposed. (C) 2015 Elsevier B.V. All rights reserved.