Effect of composition and light intensity on the electrical properties of Sn-Sb-Se glassy films

被引：17
|
作者：
Kumar, P. [1 ]
Kumar, J. [1 ]
Ahmad, M. [1 ]
Thangaraj, R. [1 ]
机构：
[1] Guru Nanak Dev Univ, Dept Appl Phys, Semicond Lab, Amritsar 143005, Punjab, India
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 90卷 / 03期
关键词：
D O I：
10.1007/s00339-007-4305-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical and photoelectrical measurements have been performed on SnxSb20Se70-x (8 <= x <= 16) glassy films. The dc activation energy, optical gap and photoconduction parameters show a typical variation near x=10 composition indicating the occurrence of a rigidity percolation threshold in the present system. The photosensitivity increases with the increase in Sn content up to x=14 and an abrupt decrease for x=16 composition. Negative photoconductivity region have been observed in the higher temperature side for samples with x=10 and 16. This system belongs to the type II category of photoconductors. The results are explained on the basis of a change in the density of localized states present in the mobility gap with the change in the composition.
引用
收藏
页码：469 / 473
页数：5
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