Ba3ZnTa2-xNbxO9 and Ba3MgT2-xNbxO9:: synthesis, structural and dielectric studies

被引：6
作者：
Thirumal, M
Murugan, GS
Varma, KBR
Ganguli, AK
机构：
[1] Indian Inst Technol, Dept Chem, New Delhi 110016, India
[2] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
来源：
MATERIALS RESEARCH BULLETIN | 2000年 / 35卷 / 14-15期
关键词：
oxides; chemical synthesis; X-ray diffraction; dielectric properties;
D O I：
10.1016/S0025-5408(00)00438-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Oxides of the families Ba3ZnTa2-xNbxO9 and Ba3MgTa2-xNbxO9 were obtained by the solid state reaction route at 1573 K and were found to crystallize in the disordered (cubic) perovskite structure. In Ba3ZnTa2-xNbXO9 and Ba3MgTa2-xNbxO9 the entire range (0 less than or equal to x less than or equal to 1) of solid solutions could be synthesized. The dielectric constant decreases with increase in frequency for all compositions in the range 40 Hz to 100 kHz (epsilon (r) varies from 16 to 22). The dielectric loss (D) shows a broad maximum for both Ba3ZnTa2-xNbxO9 and Ba3MgTa2-xNbxO9. The maxima is centered around 2 kHz in the former and near 10 kHz in the latter. (C) 2001 Elsevier Science Ltd. All sights reserved.
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页码：2423 / 2430
页数：8
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