Re-using clock management unit to implement power Gating and retention for leakage reduction at the 65-nm technology node
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作者:
Royannez, P.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Royannez, P.
[1
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Jumel, F.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Jumel, F.
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]
Mair, H.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Mair, H.
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]
Scott, D.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Scott, D.
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Rachidi, A. Er
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Rachidi, A. Er
[1
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Lagerquist, R.
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Lagerquist, R.
[1
]
Chau, M.
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Chau, M.
[1
]
Gururajarao, S.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Gururajarao, S.
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Thiruvengadam, S.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Thiruvengadam, S.
[1
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Clinton, M.
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Clinton, M.
[1
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Menezes, V.
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Menezes, V.
[1
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Hollingsworth, R.
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Hollingsworth, R.
[1
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Vaccani, J.
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Vaccani, J.
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Piacibello, F.
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Piacibello, F.
[1
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Culp, N.
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Culp, N.
[1
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Rosal, J.
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Rosal, J.
[1
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Ball, M.
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Ball, M.
[1
]
Ben-Amar, F.
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Ben-Amar, F.
[1
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Bouetel, L.
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Bouetel, L.
[1
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Domerego, O.
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Domerego, O.
[1
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Lachese, J. L.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Lachese, J. L.
[1
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Fournet-Fayard, C.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Fournet-Fayard, C.
[1
]
Ciroux, J.
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Ciroux, J.
[1
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Raibaut, C.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Raibaut, C.
[1
]
Ko, U.
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Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, FranceTexas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
Ko, U.
[1
]
机构:
[1] Texas Instruments Inc, 821 Ave Jack Kilby,BP 5, F-06270 Villeneuve Loubet, France
来源:
2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS
|
2007年
关键词:
leakage power management;
wireless SoC;
D O I:
暂无
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
Leakage power management, wireless SoC In this paper we present a leakage management system which takes advantage of the existing clock gating infrastructure. This methodology avoids both RTL and software changes, at the block and chip level. We illustrate this approach with a 65-nm digital base band modem while achieving standby leakage in the 100-uA range and overall 1200X leakage reduction including process, circuit and system optimization.