Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane

被引：20

作者：

Limmanee, Amornrat ^{[1
]}

Otsubo, Michio ^{[1
]}

Sugiura, Tsutomu ^{[1
]}

Sato, Takehiko ^{[2
]}

Miyajima, Shinsuke ^{[1
]}

Yamada, Akira ^{[3
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Mat & Proc Technol Dept, Sagamihara, Kanagawa 2291195, Japan

[3] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

关键词：

SiCN : H film; hexamethyldisilazane; hot-wire CVD; passivation layer; antireflection coating; silicon solar cells;

D O I：

10.1016/j.tsf.2007.06.217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effect of thermal annealing on the properties of a-SiCN:H films prepared by HWCVD using hexamethyldisilazane focusing on the change in the passivation quality. We found that annealing a-SiCN:H films at the temperature around 600 degrees C led to an effective hydrogen diffusion, resulting in the enhancement of the passivation effect. The performance of cast polycrystalline silicon solar cells using a-SiCN:H films showed a strong dependence on the contact firing temperature. The best efficiency of 13.75% was achieved at the firing temperature of 750 degrees C. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：652 / 655

页数：4

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