MBE growth of high quality GaN on LiGaO2

被引：26

作者：

Doolittle, WA ^{[1
]}

Kang, S

Kropewnicki, TJ

Stock, S

Kohl, PA

Brown, AS

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Mat Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 08期

关键词：

GaN; LiGaO2; molecular beam epitaxy (MBE);

D O I：

10.1007/s11664-998-0137-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the growth of high structural quality (as determined by x-ray diffraction) GaN on a near lattice matched substrate, lithium gallate (LiGaO2 or LGO). Low;temperature growth conditions are described that result in very thin GaN films (<0.3 mu m) with (0004) x-ray diffraction rocking curves full width at half maximum (FWHM) of 145 are-sec and thicker films (I mu m) resulting in 85 arcsec FWHM, The effect of growth temperature is examined and found to result in a broad minimum in x-ray FWHM around 690 degrees C. Detailed growth conditions and descriptions of the reflection high energy electron diffraction patterns observed during growth are given. Additionally, we report very highly resistive material and doped material with bulk electron mobilities in excess of 100 cm(2)/V-sec.

引用

页码：L58 / L60

页数：3