N-type diamond growth by phosphorus doping on (001)-oriented surface

The properties of phosphorus incorporation for n- type doping of diamond are discussed and summarized. Doping of (001)- oriented diamond is introduced and compared with results achieved on (111) diamond. This review describes detailed procedures and conditions of plasma- enhanced chemical vapour deposition ( CVD) growth and characteristics of electrical properties of phosphorus- doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n- type conductivity is evaluated by Hall- effect measurements over a temperature regime of 300 - 1000 K. The crystal perfection of (001)- oriented n- type diamond is also evaluated by x- ray diffraction, Raman spectroscopy, reflection high- energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (001) CVD diamond growth and that phosphorus acts as a donor as in (111)- oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices.