Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

被引：7
作者：
Choi, Hyun-Seok [1 ]
Shin, Joong-Won [1 ]
Hong, Eun-Ki [1 ]
Hwang, Inchan [1 ]
Cho, Won-Ju [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Mat Engn, 447-1 Wolgye Dong, Seoul 139701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 24期
基金：
新加坡国家研究基金会;
关键词：
ELECTROSPUN NANOFIBERS; TRANSISTORS; LOGIC; TRANSPARENT; FILMS;
D O I：
10.1063/1.5060627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We constructed complementary inverters utilizing solution-processed semiconducting single-walled carbon nanotube (scSWCNT) random networks and electrospun In-Ga-Zn-O (IGZO) nanofibers as p-type and n-type thin-film transistor (TFT) channels, respectively. The IGZO nanofiber n-type TFT and scSWCNT random network p-type TFTs show an on-off current ratio of 2.82 x 10(5) and 1.38 x 10(5), a threshold voltage of -7.60 and 9.50 V, a subthreshold swing of 380.13 and 391.01 mV/dec, and field effect mobilities of 1.96 and 5.67 cm(2)/V s for electrons and holes, respectively. In addition, these hybrid-type inverters consisting of n-channel TFTs and p-channel TFTs exhibit excellent complementary metal-oxide-semiconductor (CMOS) operation. Therefore, we expect that the hybrid CMOS-type inverters based on scSWCNT random networks and IGZO nanofibers can be innovative electronic devices for transparent and flexible digital logic circuits. Published by AIP Publishing.
引用
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页数：4
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