Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors

被引：6

作者：

Su, Sheng-Kai ^{[1
]}

Sanchez-Soares, Alfonso ^{[2
]}

Chen, Edward ^{[1
]}

Kelly, Thomas ^{[2
]}

Fagas, Giorgos ^{[3
]}

Greer, James C. ^{[4
]}

Pitner, Gregory ^{[5
]}

Wong, H-S Philip ^{[5
,6
]}

Radu, Iuliana P. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co TSMC, Corp Res, Hsinchu 30075, Taiwan

[2] EOLAS Designs Ltd, Cork T23 AK70, Ireland

[3] Univ Coll Cork, Tyndall Natl Inst, Cork T12 R5CP, Ireland

[4] Univ Nottingham Ningbo China, Elect & Elect Engn Dept, Ningbo 315100, Peoples R China

[5] Taiwan Semicond Mfg Co, Corp Res, San Jose, CA 95134 USA

[6] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 08期

关键词：

Metals; Couplings; Contact resistance; Tunneling; Logic gates; MOSFET; Leakage currents; Carbon nanotube (CNT); CMOS scaling; contact resistance; leakage current; metal hybridization; PERFORMANCE;

D O I：

10.1109/LED.2022.3185991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scaling of CNFETs. Non-equilibrium Green's function (NEGF) simulation investigates that coupling between contact metal and CNT impacts both contact resistance and leakage current. The physical mechanisms underlying the effects are analyzed. A model with calibrated metal coupling strength from experimental data projects I-ON-I-OFF design space to understand the trade-off between shrinking contact and extension lengths. For CNT with diameter of 1 nm, both contact and extension lengths greater than 8 nm are a good compromise between I-ON and I-OFF for digital logic in advanced technology nodes.

引用

页码：1367 / 1370

页数：4

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