Admittance spectroscopy of solar cells based on GaPNAs layers

被引：2

作者：

Baranov, A. I. ^{[1
]}

Gudovskikh, A. S. ^{[1
]}

Zelentsov, K. S. ^{[1
]}

Nikitina, E. V. ^{[1
]}

Egorov, A. Yu ^{[1
]}

机构：

[1] Russian Acad Sci, St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 04期

关键词：

Activation Energy; Capture Cross Section; Deep Level Transient Spectroscopy; Defect Level; Minority Carrier Lifetime;

D O I：

10.1134/S1063782615040053

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Admittance spectroscopy is used to study defect levels in the layers of a GaPNAs quaternary solid solution. Centers with an activation energy of 0.22 eV and a capture cross section of similar to 2.4 x 10(-15) cm(2) are found in doped n-GaPNAs layers grown on GaP substrates. These centers correspond to already known Si-Ga + V (P) defects in n-GaP; annealing decreases their concentration by several times. A level with an activation energy of 0.23-0.24 eV and capture cross section of similar to 9.0 x 10(-20) cm(2) is found in undoped GaPNAs layers grown on Si and GaP substrates. The concentration of these centers substantially decreases upon annealing, and, at annealing temperatures exceeding 600A degrees C, there is absolutely no response from these defects. For undoped GaPNAs layers grown on GaP substrates, a level with an activation energy of 0.18 eV and capture cross section of similar to 1.1 x 10(-16) cm(2) is also found. The concentration of these centers remains unchanged upon annealing.

引用

页码：524 / 528

页数：5

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