Effects of Si content on phase composition and thermoelectric properties of higher manganese silicide

被引:8
作者
Luo Wen-Hui [1 ]
Li Han [1 ]
Lin Ze-Bing [1 ]
Tang Xin-Feng [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
关键词
higher manganese suicide; Si contents; phase compositions; thermoelectric properties; CRYSTAL-STRUCTURE; ELECTRICAL-PROPERTIES; GROWTH;
D O I
10.7498/aps.59.8783
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
MnSi1.70 + x (x = 0, 0. 05, 0. 1, 0. 15) compounds have been prepared by induction melting-annealing procedure combined with spark plasma sintering method. The phase composition and the thermoelectric properties of higher manganese silicide (HMS) with different Si contents are investigated. The results indicate that the samples with x < 0. 1 include HMS phase and MnSi phase, and the relative content of MnSi phase decreases with x value increasing. The sample with x = 0. 1 is single phase HMS. The phase compositions of the sample with x > 0. 1 are HMS and Si. As x value inereases the electrical conductivity of the sample gradually decreases, while the Seebeck coefficient increases because metallic MnSi phase decreases. The carrier concentration and the effective mass of the sample at room temperature decrease and the carrier mobility increases with x value increasing. In the sample with x = 0. 1, the impurity phase content is the least, which results in the lowest thermal conductivity and a minimum value of 2. 25 W . m(-1) K-1 at 800 K. The maximum ZT value of 0. 45 is obtained at 850 K for MnSi1.80.
引用
收藏
页码:8783 / 8788
页数:6
相关论文
共 24 条
[2]  
Fedorov M. I., 2006, THERMOELECTRICS HDB, P31
[3]   Thermoelectric elements based on compounds of silicon and transition metals [J].
Fedorov, MI ;
Zaitsev, VK ;
Solomkin, FY ;
Vedernikov, MV .
TECHNICAL PHYSICS LETTERS, 1997, 23 (08) :602-603
[4]   Magnetic properties of single crystalline Mn4Si7 [J].
Gottlieb, U ;
Sulpice, A ;
Lambert-Andron, B ;
Laborde, O .
JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 361 (1-2) :13-18
[5]   THERMOELECTRIC GENERATORS MADE OF FESI2 AND HMS - FABRICATION AND MEASUREMENT [J].
GROSS, E ;
RIFFEL, M ;
STOHRER, U .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (01) :34-40
[6]   Quantum dot superlattice thermoelectric materials and devices [J].
Harman, TC ;
Taylor, PJ ;
Walsh, MP ;
LaForge, BE .
SCIENCE, 2002, 297 (5590) :2229-2232
[7]  
IOFFE A, 1962, J ELECTROCHEM SOC, V109, P43
[8]   CRYSTAL-GROWTH OF MANGANESE SILICIDE, MNSI APPROXIMATELY 1.73 AND SEMICONDUCTING PROPERTIES OF MN15SI26 [J].
KAWASUMI, I ;
SAKATA, M ;
NISHIDA, I ;
MASUMOTO, K .
JOURNAL OF MATERIALS SCIENCE, 1981, 16 (02) :355-366
[9]   CRYSTAL STRUCTURE OF MN15SI26 [J].
KNOTT, HW ;
MUELLER, MH ;
HEATON, L .
ACTA CRYSTALLOGRAPHICA, 1967, 23 :549-&
[10]   CRYSTAL-GROWTH OF MN15SI26 [J].
KOJIMA, T ;
NISHIDA, I ;
SAKATA, T .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (04) :589-592