GaN/Al0.1Ga0.9N-based visible-blind double heterojunction phototransistor with a collector-up structure

被引：8

作者：

Zhang, Lingxia ^{[1
]}

Tang, Shaoji ^{[1
]}

Wu, Hualong ^{[1
]}

Wang, Hailong ^{[1
]}

Wu, Zhisheng ^{[2
]}

Jiang, Hao ^{[3
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[3] Sun Yat Sen Univ, Sch Microelect, Guangzhou 510275, Guangdong, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 08期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

AlGaN; GaN; heterojunctions; optical gain; phototransistors; AVALANCHE PHOTODIODES; BIPOLAR-TRANSISTORS; INTERLAYER; ALGAN;

D O I：

10.1002/pssa.201600821

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-m-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9x10(4) and 1.2x10(2) were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6x10(3) was achieved.

引用

页数：4

共 22 条

[21] High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Yutong FAN
Xi LIU
Ren HUANG
Yu WEN
Weihang ZHANG
Jincheng ZHANG
Zhihong LIU
Shenglei ZHAO
Science China(Information Sciences), 2023, 66 (12) : 297 - 298
[22] High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Fan, Yutong
Liu, Xi
Huang, Ren
Wen, Yu
Zhang, Weihang
Zhang, Jincheng
Liu, Zhihong
Zhao, Shenglei
SCIENCE CHINA-INFORMATION SCIENCES, 2023, 66 (12)

← 1 2 3 →