GaN/Al0.1Ga0.9N-based visible-blind double heterojunction phototransistor with a collector-up structure

被引：8
|
作者：
Zhang, Lingxia [1 ]
Tang, Shaoji [1 ]
Wu, Hualong [1 ]
Wang, Hailong [1 ]
Wu, Zhisheng [2 ]
Jiang, Hao [3 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Sun Yat Sen Univ, Sch Microelect, Guangzhou 510275, Guangdong, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 08期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
AlGaN; GaN; heterojunctions; optical gain; phototransistors; AVALANCHE PHOTODIODES; BIPOLAR-TRANSISTORS; INTERLAYER; ALGAN;
D O I：
10.1002/pssa.201600821
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-m-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9x10(4) and 1.2x10(2) were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6x10(3) was achieved.
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页数：4
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