Adsorption of 2-butyne on Si(001) at room temperature: A valence band photoemission study

被引:2
作者
Bournel, F.
Gallet, Ja.
Rochet, F.
Fujii, J.
Panaccione, G.
机构
[1] Univ Paris 06, UMR 7614, Lab Chim Phys Mat & Rayonnement, F-75231 Paris 5, France
[2] CNR, INFM, TASC Natl Lab, Trieste, Italy
关键词
Si(001); silicon; ARUPS; 2-butyne; adsorption; photoemission; valence band;
D O I
10.1016/j.susc.2007.04.099
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present an angle resolved ultraviolet photoemission spectroscopy study of the adsorption of 2-butyne (CH3-C C-CH3) on Si(001)-2 x 1 at room temperature. We recorded valence band photoemission spectra for two azimuthal positions of a vicinal silicon surface, where all the rows formed by the surface silicon dimers are parallel. The photoemission symmetry selection rules allow the determination of the orientation of the molecular orbitals. The photoemission signal of the HOMO is enhanced when the electric field is parallel to the dimer rows. This showed that the pi orbital left intact after the cyclo-addition reaction of the molecule with one silicon dimer is parallel to the dimer rows. This indicates that each 2-butyne molecule adsorbs on one silicon dimer. In spite of the size of the system and the vicinity of the orbitals, the angle resolved study points out that no dispersion of the electronic bands occurs. Not all the surface dimers are reacted so some disorder still exists on the surface preventing the formation of Bloch states. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:3750 / 3754
页数:5
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